TSMC and ASML launch industry initiative to transition High NA EUV to 12-inch photomasks

Joint initiative targets 12-inch photomasks for High NA EUV

ASML Holding N.V. and Taiwan Semiconductor Manufacturing Company announced on September 8, 2026 a collaborative initiative to lead the semiconductor industry's transition from current 6-inch photomasks to larger 12-inch photomasks for High NA Extreme Ultraviolet lithography. The announcement was made in advance of the SPIE BACUS Conference in Monterey, California, where ASML and TSMC formed the initiative on September 7. Both companies said the transition is intended to increase fab productivity, lower chipmaking costs, and remove stitching constraints associated with smaller-format masks, while enabling broader access to High NA EUV for advanced chip manufacturers.

Milestones set for pilot line and production readiness

The initiative targets establishing a 12-inch mask pilot line by 2031, with full lithography system readiness for advanced node production by 2033. ASML and TSMC said High NA EUV will first be deployed in production using current 6-inch masks, and the larger-format transition is expected to follow progressively along the device scaling roadmap. According to the announcement, TSMC intends to use ASML's High NA technology in high-volume manufacturing for advanced nodes starting in 2030, with the number of layers requiring High NA EUV expected to rise as transistor architectures grow more complex, driven primarily by AI applications.

Industry support and executive commentary

ASML and TSMC stated that High NA EUV adopters and other major suppliers have expressed interest in joining the initiative, and that ecosystem partners and suppliers attended the formation event. ASML President and CEO Christophe Fouquet said the company expects High NA EUV adoption to increase progressively along the device scaling roadmap and expressed satisfaction with the initial support from semiconductor manufacturers, mask suppliers, and partners. TSMC Chairman and CEO Dr. C.C. Wei framed the effort as a collective industry challenge, stating that collaboration across the value chain is intended to keep advanced technology accessible at scale through continuous innovation.

Next verifiable milestone

The next clearly defined checkpoint is the establishment of the 12-inch mask pilot line targeted for 2031, with full High NA EUV lithography system readiness for advanced node production slated for 2033, and TSMC's planned use of ASML's High NA technology in high-volume manufacturing for advanced nodes beginning in 2030.